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ASW214 Datasheet(PDF) 8 Page - Advanced Semiconductor Business Inc. |
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ASW214 Datasheet(HTML) 8 Page - Advanced Semiconductor Business Inc. |
8 / 12 page 8/12 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 October 2013 ASW214 5 ~ 8000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +0 dBm/tone sepa- rated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Wide Band 1700 ~ 2500 MHz +5 V Frequency (MHz) 1750 2000 2400 Magnitude S21 (dB) 18 18 17 Magnitude S11 (dB) -10 -9 -8 Magnitude S22 (dB) -15 -14 -11 Output P1dB (dBm) 17 17 17 Output IP31) (dBm) 32 32 32 Noise Figure (dB) 5.5 5.7 5.7 Device Voltage (V) +5 Current (mA) 52 C1=100 pF L1=10 nH C2=100 pF RF IN RF OUT ASW214 Vcc=5 V C3=100 pF C4=1 F D1=5.6V Zener Diode R1=2.7 1200 1400 1600 1800 2000 2200 2400 2600 2800 0 5 10 15 20 25 Frequency (MHz) 1200 1400 1600 1800 2000 2200 2400 2600 2800 -20 -15 -10 -5 0 5 Frequency (MHz) 1200 1400 1600 1800 2000 2200 2400 2600 2800 -30 -25 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) |
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