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BCR8FM-14LB Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR8FM-14LB Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page BCR8FM-14LB Preliminary R07DS1187EJ0200 Rev.2.00 Page 2 of 7 Aug 07, 2014 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 8 A Commercial frequency, sine full wave 360 °conduction, Tc = 114 °C (#BB0, See Ordering Info.) 107 °C (#FA0, See Ordering Info.) Surge on-state current ITSM 80 A 60 Hz sinewave 1 full cycle, peak value, non-repetitive I 2t for fusion I 2t 26 A 2s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction Temperature Tj –40 to +150 °C Storage temperature Tstg –40 to +150 °C Mass — 1.9 g Typical value Isolation voltage Note6 Viso 2000 V Ta=25 °C, AC 1 minute, T1 • T2 • G terminal to case Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150 °C, VDRM applied On-state voltage VTM — — 1.6 V Tc = 25 °C, ITM = 12A, instantaneous measurement Gate trigger voltage Note2 Ι VFGTΙ — — 1.5 V Tj = 25 °C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙΙ VRGTΙ — — 1.5 V ΙΙΙ VRGTΙΙΙ — — 1.5 V Gate trigger curent Note2 Ι IFGTΙ — — 30 Note5 mA Tj = 25 °C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙΙ IRGTΙ — — 30 Note5 mA ΙΙΙ IRGTΙΙΙ — — 30 Note5 mA Gate non-trigger voltage VGD 0.2 — — V Tj = 125 °C, VD = 1/2 VDRM 0.1 — — Tj = 150 °C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 3.6 °C/W Junction to case Note3 #BB0 (See Ordering Info.) — — 4.3 °C/W Junction to case Note3 #FA0 (See Ordering Info.) Critical-rate of rise of off-state commutation voltage Note4 (dv/dt)c 10 — — V/ μs Tj = 125 °C 1 — — Tj = 150 °C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact themal resistance Rth (c-f) in case of greasing is 0.5 °C /W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. High sensitivity (IGT ≤20mA) is also available.(IGT item:1) 6. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 °C/150°C 2.Rate of rise of off-state commutating voltage (dv/dt)c =-4 A/ms 3.Peak off-state voltage VD = 400 V Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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