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BCR8FM-14LB Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # BCR8FM-14LB
Description  700V ??8A - Triac Medium Power Use
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR8FM-14LB Datasheet(HTML) 2 Page - Renesas Technology Corp

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BCR8FM-14LB
Preliminary
R07DS1187EJ0200 Rev.2.00
Page 2 of 7
Aug 07, 2014
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
8
A
Commercial frequency, sine full wave
360
°conduction,
Tc =
114
°C (#BB0, See Ordering Info.)
107
°C (#FA0, See Ordering Info.)
Surge on-state current
ITSM
80
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I
2t for fusion
I
2t
26
A
2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
PGM
5
W
Average gate power dissipation
PG (AV)
0.5
W
Peak gate voltage
VGM
10
V
Peak gate current
IGM
2
A
Junction Temperature
Tj
–40 to +150
°C
Storage temperature
Tstg
–40 to +150
°C
Mass
1.9
g
Typical value
Isolation voltage
Note6
Viso
2000
V
Ta=25
°C, AC 1 minute,
T1 • T2 • G terminal to case
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0
mA
Tj = 150
°C, VDRM applied
On-state voltage
VTM
1.6
V
Tc = 25
°C, ITM = 12A,
instantaneous measurement
Gate trigger voltage
Note2
Ι
VFGTΙ
1.5
V
Tj = 25
°C, VD = 6 V, RL = 6 Ω,
RG = 330
Ω
ΙΙ
VRGTΙ
1.5
V
ΙΙΙ
VRGTΙΙΙ
1.5
V
Gate trigger curent
Note2
Ι
IFGTΙ
30
Note5
mA
Tj = 25
°C, VD = 6 V, RL = 6 Ω,
RG = 330
Ω
ΙΙ
IRGTΙ
30
Note5
mA
ΙΙΙ
IRGTΙΙΙ
30
Note5
mA
Gate non-trigger voltage
VGD
0.2
V
Tj = 125
°C, VD = 1/2 VDRM
0.1
Tj = 150
°C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
3.6
°C/W
Junction to case
Note3
#BB0 (See Ordering Info.)
4.3
°C/W
Junction to case
Note3
#FA0 (See Ordering Info.)
Critical-rate of rise of off-state
commutation voltage
Note4
(dv/dt)c
10
V/
μs
Tj = 125
°C
1
Tj = 150
°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance Rth (c-f) in case of greasing is 0.5
°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (IGT
≤20mA) is also available.(IGT item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125
°C/150°C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4 A/ms
3.Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c


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