2SK1629-E1-E_15 datasheet(3/7 Pages) RENESAS

Part #	2SK1629-E1-E

Description	500V - 30A - MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

2SK1629-E1-E

Preliminary

R07DS1197EJ0200 Rev.2.00

Page 3 of 6

Mar 26, 2014

Main Characteristics

50

40

30

20

10

0

4

08

12

16

20

16

12

8

4

0

2

04

6

8

10

VGS = 4 V

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

VDS = 20 V

Pulse Test

5 V

6 V

7 V

10 V

1000

100

0.1

10

100

1000

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

1

10

1

Tc = 25

°C

1 shot

10

μs

PW

=

100

μs

Operation in this

area is limited by

RDS(on)

Ta = 25

°C

Pulse Test

Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Drain Current (Typical)

1

0.1

0.01

110

100

1.0

0.8

0.6

0.4

0.2

–25

0

25

50

75

100 125 150

0

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature (Typical)

5 A

ID = 20 A

VGS = 10 V

Pulse Test

1

10

100

1000

100

10

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

di/dt = 100 A/

μs

VGS = 0, Ta = 25°C

25°C

–25°C

Tc = 75°C

VGS = 10 V

Ta = 25

°C

Pulse Test

10 A

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2SK1629-E1-E Datasheet(PDF) 3 Page - Renesas Technology Corp

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