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SI2319DS-3 Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI2319DS-3
Description  P-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2319DS-3 Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
4
MOSFET
.
P-Channel Enhancement MOSFET
SI2319DS (KI2319DS)
Typical Characterisitics
−0.4
−0.2
0.0
0.2
0.4
0.6
−50
−25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2
4
6
8
10
T J = 150 C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Square Wave Pulse Duration (sec)
VSD
V
)
V
(
e
g
a
tl
o
V
n
i
a
r
D
-
o
t-
e
c
r
u
o
S
GS − Gate-to-Source Voltage (V)
TJ − Temperature (
)
c
e
s
(
e
m
i
T
)
C
ID = 3 A
ID = 250 A
20
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
T J = 25 C
1
TA = 25 C
Single Pulse
Safe Operating Area, Junction-to-Case
VDS − Drain-to-Source Voltage (V)
100.0
1.0
0.1
1
10
100
0.01
10.0
0.1
Limited by
rDS(on)
TA = 25 C
Single Pulse
10 ms
100 ms
10 s
100 s
1 ms
dc, 100 s, 10 s, 1 s
10
8
6
4
2
0
0.01
0.1
1
10
100
1000
10


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