IRFF430 datasheet(4/7 Pages) INTERSIL

Part #	IRFF430

Description	2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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4

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

10

1

0.1

103

110

102

0.01

VDS, DRAIN TO SOURCE VOLTAGE (V)

20

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

10ms

100ms

1ms

DC

100 s

10 s

TC = 25

oC

TJ = MAX RATED

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

200

0

300

6

4

3

0

2

VGS = 5V

VGS = 4.5V

VGS = 4V

80

µs PULSE TEST

1

VGS = 5.5V

5

VGS = 10V

VDS, DRAIN TO SOURCE VOLTAGE (V)

24

6

8

010

5

4

3

0

2

VGS = 10V

VGS = 5V

VGS = 4.5V

VGS = 5.5V

80

µs PULSE TEST

1

VGS = 4V

VDS > ID(ON) x rDS(ON)MAX

80

µs PULSE TEST

TJ = 125

oC

VGS, GATE TO SOURCE VOLTAGE (V)

5

3

1

0

01234

7

2

4

TJ = -55

oC

TJ = 25

oC

56

ID, DRAIN CURRENT (A)

5

101520

025

4

1

3

VGS = 20V

2

VGS = 10V

2.2

1.4

0.6

0

160

TJ, JUNCTION TEMPERATURE (

oC)

1.8

1.0

0.2

-40

40

80

120

ID = 1.5A

VGS = 10V

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