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SI2301BDS Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2301BDS Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 5 page SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) ■ Features ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Gate 2.Source 3.Drain 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current *1 Ta=25℃ -2.4 -2.2 Ta=70℃ -1.9 -1.8 Pulsed Drain Current *2 IDM Power Dissipation *1 Ta=25℃ 0.9 0.7 W Ta=70℃ 0.57 0.45 Thermal Resistance.Junction- to-Ambient *1 120 145 *3 140 175 Junction Temperature TJ Storage Temperature Range Tstg PD 150 -55 to 150 RthJA ID -20 ± 8 -10 V A ℃ ℃ /W *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. G S D 2 3 1 |
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