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SI2301BDS Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI2301BDS
Description  P-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2301BDS Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
P-Channel Enhancement MOSFET
SI2301BDS (KI2301BDS)
■
Features
●
VDS (V) =-20V
●
RDS(ON) ＜ 100mΩ (VGS =-4.5V)
●
RDS(ON) ＜ 150mΩ (VGS =-2.5V)
0.4 +0.1
-0.1
2.9 +0.1
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.1
1.Gate
2.Source
3.Drain
1
2
3
Unit: mm
SOT-23
0.1 +0.05
-0.01
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current *1
Ta=25℃
-2.4
-2.2
Ta=70℃
-1.9
-1.8
Pulsed Drain Current *2
IDM
Power Dissipation
*1
Ta=25℃
0.9
0.7
W
Ta=70℃
0.57
0.45
Thermal Resistance.Junction- to-Ambient *1
120
145
*3
140
175
Junction Temperature
TJ
Storage Temperature Range
Tstg
PD
150
-55 to 150
RthJA
ID
-20
±
8
-10
V
A
℃
℃
/W
*1 Surface Mounted on FR4 Board, t ≤ 5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
G
S
D
2
3
1


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