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BAS116W Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS116W Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  BAS116W 0.215A , 85V Surface Mount Small Signal Switching Diode Elektronische Bauelemente 2-Dec-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOD-123 Cathode Band G E A J F D H C B 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low leakage current applications. Medium speed switching times. Surface mount package ideally suited for automatic Insertion. APPLICATINS High speed switching application. MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Peak Repetitive Peak Reverse Voltage VRRM 85 V Working Peak Reverse Voltage VRWM 85 V DC Blocking Voltage VR 85 V RMS Reverse Voltage VR(RMS) 60 V Forward Continuous Current IFM 215 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current t=1µs IFSM 4 A t=1ms 1 t=1s 0.5 Power Dissipation PD 500 mW Thermal Resistance Junction to Ambient Air RθJA 500 °C / W Junction, Storage Temperature TJ, TSTG 150, -65~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 85 - - V IR=100µA Forward Voltage VF - - 0.9 V IF=1mA - - 1 IF=10mA - - 1.1 IF=50mA - - 1.25 IF=150mA Reverse Leakage Current IR - - 5 nA VR=75V - - 80 VR=75V, TJ=150°C Junction Capacitance CJ - 2 - pF VR=0, f=1.0MHz Reverse Recovery Time TRR - - 3 nS IF=IR=10mA, IRR=0.1xIR Package MPQ Leader Size SOD-123 3K 7 inch JV REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.95 1.35 F 1.40 1.80 B 0.10 REF. G 2.55 2.85 C 1.05 1.15 H 3.55 3.85 D 0.30 0.78 J - E 0.08 0.25 |
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