RF1S9530SM datasheet(2/7 Pages) INTERSIL

Part #	RF1S9530SM

Description	12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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4-10

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF9530,

RF1S9530SM

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

-100

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

-12

-7.5

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

-48

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

75

W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

500

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to T

J = 125

oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V, (Figure 10)

-100

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2

-

-4

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

-25

µA

VDS = 0.8 x Rated BVDSS,VGS = 0V, TC= 125

oC

-

-250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,

(Figure 7)

-12

-

A

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -6.5A, VGS = -10V, (Figures 8, 9)

-

0.250

0.300

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON) Max, ID = -6.5A

(Figure 12)

2

3.8

-

S

Turn-On Delay Time

td(ON)

VDD = 50V, ID ≈ -12A, RG = 50Ω, VGS = 10V

RL = 4.2Ω, (Figures 17, 18)

MOSFET Switching Times are Essentially Inde-

pendent of Operating Temperature

-3060

ns

Rise Time

tr

-

70

140

ns

Turn-Off Delay Time

td(off)

-

70

140

ns

Fall Time

tf

-

70

140

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -12A, VDSS= 0.8 x Rated BVDSS,

(Figure 14, 19, 20) Gate Charge

is Essentially Independent of Operating

Temperature

-2545

nC

Gate to Source Charge

Qgs

-13

-

nC

Gate to Drain (“Miller”) Charge

Qgd

-12

-

nC

Input Capacitance

CISS

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)

-

500

-

pF

Output Capacitance

COSS

-

300

-

pF

Reverse Transfer Capacitance

CRSS

-

100

-

pF

Internal Drain Inductance

LD

Measured From the

Contact Screw On Tab To

Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

3.5

-

nH

Measured From the Drain

Lead, 6mm (0.25in) From

Package to Center of Die

-

4.5

-

nH

Internal Source Inductance

LS

Measured From The

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

-

7.5

-

nH

Thermal Resistance Junction to Case

RθJC

-

1.67

oC/W

Thermal Resistance Junction to Ambient

RθJA

Typical Socket Mount

-

62.5

oC/W

LS

LD

G

D

S

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