Part Name
         Description
IRF450

 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET ( 7 Page)


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4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
102
10
110
102
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
µs
100
µs
1ms
DC
10ms
103
TJ = MAX RATED
SINGLE PULSE
TC = 25
oC
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
103
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
100
150
200
0
250
20
16
12
0
8
VGS = 5.5V
VGS = 4.5V
VGS = 5.0V
80
µs PULSE TEST
4
VGS = 6.0V
VGS = 4.0V
VDS, DRAIN TO SOURCE VOLTAGE (V)
36
9
12
015
20
16
12
0
8
80
µs PULSE TEST
4
VGS = 10V
VGS = 5.5V
VGS = 4.5V
VGS = 5.0V
VGS = 6.0V
VGS = 4.0V
VGS, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
10-2
0
2468
10
TJ = 150
oC
TJ = 25
oC
2
2
2
2
5
5
5
80
µs PULSE TEST
VDS ≥ 50V
5
102
48
ID, DRAIN CURRENT (A)
12
24
36
060
2.0
1.6
1.2
0
0.8
VGS = 20V
0.4
VGS = 10V
80
µs PULSE TEST
3.0
1.8
0.6
80
-60
TJ, JUNCTION TEMPERATURE (
oC)
2.4
1.2
0
0
60
120
160
ID = 13A
-20
-40
20
40
100
140
VGS = 10V
IRF450



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