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IRF140 Datasheet(PDF) 1 Page - Intersil Corporation |
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IRF140 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 7 page 1 File Number 2306.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF140 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. Features • 28A, 100V •rDS(ON) = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol Packaging JEDEC TO-204AE Ordering Information PART NUMBER PACKAGE BRAND IRF140 TO-204AE IRF140 NOTE: When ordering, use the entire part number. D G S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) Data Sheet March 1999 |
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