SMD Type

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2

MOSFET

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

-30

V

-1

-5

Gate-Body leakage current

±

100

nA

Gate Threshold Voltage

-1.2

-2.4

V

32

33

55

On state drain current

-40

A

Forward Transconductance

14.5

S

Input Capacitance

920 1120

Output Capacitance

190

Reverse Transfer Capacitance

122

Gate resistance

3.6

5

Ω

Total Gate Charge (10V)

18.4

23

Total Gate Charge (4.5V)

9.3

11.5

Gate Source Charge

2.7

Gate Drain Charge

4.9

Turn-On DelayTime

7.1

Turn-On Rise Time

3.4

Turn-Off DelayTime

18.9

Turn-Off Fall Time

8.4

Body Diode Reverse Recovery Time

21.5

27

Body Diode Reverse Recovery Charge

12.5

nC

Maximum Body-Diode Continuous Current

-4.2

A

Diode Forward Voltage

-1

V

pF

nC

ns

Zero Gate Voltage Drain Current

uA

mΩ

Static Drain-Source On-Resistance

Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

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Marking

4411

KC****

Marking