SMD Type

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2

MOSFET

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

-30

V

-1

-5

Gate-Body leakage current

±

100

nA

Gate Threshold Voltage

-1.4

-2.4

V

110

140

180

On state drain current

-20

A

Forward Transconductance

5

S

Input Capacitance

197

240

Output Capacitance

42

Reverse Transfer Capacitance

26

37

Gate resistance

3.5

11

Ω

Total Gate Charge (10V)

4.3

5.2

Total Gate Charge (4.5V)

2.2

3

Gate Source Charge

0.7

Gate Drain Charge

1.1

Turn-On DelayTime

7.5

Turn-On Rise Time

4.1

Turn-Off DelayTime

11.8

Turn-Off Fall Time

3.8

Body Diode Reverse Recovery Time

11.3

14

Body Diode Reverse Recovery Charge

4.4

nC

Maximum Body-Diode Continuous Current

-1.5

A

Diode Forward Voltage

-1

V

pF

nC

ns

Zero Gate Voltage Drain Current

uA

mΩ

Static Drain-Source On-Resistance

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

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Marking

Marking

AP**