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AO3409-3 Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Part # AO3409-3
Description  P-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

AO3409-3 Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
SMD Type
IC
SMD Type
MOSFET
AO3409 (KO3409)
■
Typical Characterisitics
18
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
-Qg (nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
Crss
0.1
1.0
10.0
100.0
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=-15V
ID=-2.6A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10µs


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