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W632GG8KB-11 Datasheet(PDF) 7 Page - Winbond |
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W632GG8KB-11 Datasheet(HTML) 7 Page - Winbond |
7 / 159 page W632GG8KB Publication Release Date: Jul. 28, 2014 Revision: A04 - 7 - 4. KEY PARAMETERS Speed Bin DDR3-1866 DDR3-1600 DDR3-1333 Unit CL-nRCD-nRP 13-13-13 11-11-11 9-9-9 Part Number Extension -11 -12/12I -15/15I Parameter Sym. Min. Max. Min. Max. Min. Max. Maximum operating frequency using maximum allowed settings for Sup_CL and Sup_CWL fCKMAX 933 800 667 MHz Internal read command to first data tAA 13.91 20 13.75 (13.125) *5 20 13.5 (13.125) *5 20 nS ACT to internal read or write delay time tRCD 13.91 13.75 (13.125) *5 13.5 (13.125) *5 nS PRE command period tRP 13.91 13.75 (13.125) *5 13.5 (13.125) *5 nS ACT to ACT or REF command period tRC 47.91 48.75 (48.125) *5 49.5 (49.125) *5 nS ACT to PRE command period tRAS 34 9 * tREFI 35 9 * tREFI 36 9 * tREFI nS CL = 6 CWL = 5 tCK(AVG) 2.5 3.3 2.5 3.3 2.5 3.3 nS CL = 7 CWL = 6 tCK(AVG) Reserved 1.875 < 2.5 1.875 < 2.5 nS CL = 8 CWL = 6 tCK(AVG) 1.875 < 2.5 1.875 < 2.5 1.875 < 2.5 nS CL = 9 CWL = 7 tCK(AVG) Reserved 1.5 < 1.875 1.5 < 1.875 nS CL = 10 CWL = 7 tCK(AVG) 1.5 < 1.875 1.5 < 1.875 1.5 < 1.875 nS CL = 11 CWL = 8 tCK(AVG) Reserved 1.25 < 1.5 Reserved nS CL = 13 CWL = 9 tCK(AVG) 1.07 < 1.25 Reserved Reserved nS Supported CL Settings Sup_CL 6, 8, 10, 13 6, (7), 8, (9), 10, 11 6, (7), 8, 9, 10 nCK Supported CWL Settings Sup_CWL 5, 6, 7, 9 5, 6, 7, 8 5, 6, 7 nCK Average periodic refresh Interval -40°C ≤ TCASE ≤ 85°C tREFI *2 7.8 *2, 3 7.8 *2, 3 μS 0°C ≤ TCASE ≤ 85°C 7.8 *1 7.8 *1 7.8 *1 μS 85°C < TCASE ≤ 95°C 3.9 *4 3.9 *4 3.9 *4 μS Operating One Bank Active-Precharge Current IDD0 105 95 90 mA Operating One Bank Active-Read-Precharge Current IDD1 120 115 110 mA Operating Burst Read Current IDD4R 250 220 205 mA Operating Burst Write Current IDD4W 230 200 180 mA Burst Refresh Current IDD5B 145 140 135 mA Self-Refresh Current, TOPER = 0 ~ 85°C IDD6 19 19 19 mA Operating Bank Interleave Current IDD7 360 340 330 mA Notes: (Field value contents in blue font or parentheses are optional AC parameter and CL setting) 1. All speed grades support 0°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications. 2. For -11, -12 and -15 speed grades, -40°C ≤ TCASE < 0°C is not available. 3. 12I and 15I speed grades support -40°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications. 4. For all speed grade parts, TCASE is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS period ( tREFI = 3.9 µS), it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the Auto Self-Refresh mode (ASR) (MR2 A6 = 1b, MR2 A7 is don't care). 5. For devices supporting optional down binning to CL=7 and CL=9, tAA/tRCD/tRP min must be 13.125 nS or lower. SPD settings must be programmed to match. For example, DDR3-1333 (9-9-9) devices supporting down binning to DDR3-1066 (7-7-7) should program 13.125 nS in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600 (11-11-11) devices supporting down binning to DDR3-1333 (9-9-9) or DDR3-1066 (7-7-7) should program 13.125 nS in SPD bytes for tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125 nS, tRCmin (Byte 21, 23) also should be programmed accodingly. For example, 49.125nS (tRASmin + tRPmin = 36 nS + 13.125 nS) for DDR3-1333 (9-9-9) and 48.125 nS (tRASmin + tRPmin = 35 nS + 13.125 nS) for DDR3-1600 (11-11-11). |
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