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W632GG8KB-11 Datasheet(PDF) 7 Page - Winbond

Part # W632GG8KB-11
Description  32M X 8 BANKS X 8 BIT DDR3 SDRAM
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Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond

W632GG8KB-11 Datasheet(HTML) 7 Page - Winbond

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W632GG8KB
Publication Release Date: Jul. 28, 2014
Revision: A04
- 7 -
4.
KEY PARAMETERS
Speed Bin
DDR3-1866
DDR3-1600
DDR3-1333
Unit
CL-nRCD-nRP
13-13-13
11-11-11
9-9-9
Part Number Extension
-11
-12/12I
-15/15I
Parameter
Sym.
Min.
Max.
Min.
Max.
Min.
Max.
Maximum operating frequency using maximum
allowed settings for Sup_CL and Sup_CWL
fCKMAX
933
800
667
MHz
Internal read command to first data
tAA
13.91
20
13.75
(13.125) *5
20
13.5
(13.125) *5
20
nS
ACT to internal read or write delay time
tRCD
13.91
13.75
(13.125) *5
13.5
(13.125) *5
nS
PRE command period
tRP
13.91
13.75
(13.125) *5
13.5
(13.125) *5
nS
ACT to ACT or REF command period
tRC
47.91
48.75
(48.125) *5
49.5
(49.125) *5
nS
ACT to PRE command period
tRAS
34
9 * tREFI
35
9 * tREFI
36
9 * tREFI
nS
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
2.5
3.3
2.5
3.3
nS
CL = 7
CWL = 6
tCK(AVG)
Reserved
1.875
< 2.5
1.875
< 2.5
nS
CL = 8
CWL = 6
tCK(AVG)
1.875
< 2.5
1.875
< 2.5
1.875
< 2.5
nS
CL = 9
CWL = 7
tCK(AVG)
Reserved
1.5
< 1.875
1.5
< 1.875
nS
CL = 10
CWL = 7
tCK(AVG)
1.5
< 1.875
1.5
< 1.875
1.5
< 1.875
nS
CL = 11
CWL = 8
tCK(AVG)
Reserved
1.25
< 1.5
Reserved
nS
CL = 13
CWL = 9
tCK(AVG)
1.07
< 1.25
Reserved
Reserved
nS
Supported CL Settings
Sup_CL
6, 8, 10, 13
6, (7), 8, (9), 10, 11
6, (7), 8, 9, 10
nCK
Supported CWL Settings
Sup_CWL
5, 6, 7, 9
5, 6, 7, 8
5, 6, 7
nCK
Average periodic
refresh Interval
-40°C
≤ TCASE ≤ 85°C
tREFI
 *2
7.8 *2, 3
7.8 *2, 3
μS
0°C
≤ TCASE ≤ 85°C
7.8 *1
7.8 *1
7.8 *1
μS
85°C < TCASE
≤ 95°C
3.9 *4
3.9 *4
3.9 *4
μS
Operating One Bank Active-Precharge Current
IDD0
105
95
90
mA
Operating One Bank Active-Read-Precharge
Current
IDD1
120
115
110
mA
Operating Burst Read Current
IDD4R
250
220
205
mA
Operating Burst Write Current
IDD4W
230
200
180
mA
Burst Refresh Current
IDD5B
145
140
135
mA
Self-Refresh Current, TOPER = 0 ~ 85°C
IDD6
19
19
19
mA
Operating Bank Interleave Current
IDD7
360
340
330
mA
Notes: (Field value contents in blue font or parentheses are optional AC parameter and CL setting)
1.
All speed grades support 0°C
≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
2.
For -11, -12 and -15 speed grades, -40°C
≤ TCASE < 0°C is not available.
3.
12I and 15I speed grades support -40°C
≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
4.
For all speed grade parts, TCASE is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS
period ( tREFI = 3.9 µS), it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range
capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the Auto Self-Refresh mode (ASR) (MR2 A6 = 1b, MR2 A7 is don't care).
5.
For devices supporting optional down binning to CL=7 and CL=9, tAA/tRCD/tRP min must be 13.125 nS or lower. SPD settings
must be programmed to match. For example, DDR3-1333 (9-9-9) devices supporting down binning to DDR3-1066 (7-7-7)
should program 13.125 nS in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600 (11-11-11)
devices supporting down binning to DDR3-1333 (9-9-9) or DDR3-1066 (7-7-7) should program 13.125 nS in SPD bytes for
tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125 nS, tRCmin (Byte 21,
23) also should be programmed accodingly. For example, 49.125nS (tRASmin + tRPmin = 36 nS + 13.125 nS) for DDR3-1333
(9-9-9) and 48.125 nS (tRASmin + tRPmin = 35 nS + 13.125 nS) for DDR3-1600 (11-11-11).


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