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HV400MJ883 Datasheet(PDF) 10 Page - Intersil Corporation |
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HV400MJ883 Datasheet(HTML) 10 Page - Intersil Corporation |
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10 / 11 page  10 Die Characteristics DIE DIMENSIONS: 1700 x 1820 x 483 µm METALLIZATION: Type: 1% Cu, 99% Al Thickness: 16k Å ± 2kÅ SUBSTRATE POTENTIAL (POWERED UP): Unbiased WORST CASE CURRENT DENSITY: 8.2 x 104 A/cm2 during 1 µs pulse with -35A output current, through 8 µm wide line 14kA thick. GLASSIVATION: Type: Silox Thickness: 12k Å ± 2kÅ Type: Nitride Thickness: 3.5k Å ± 2.5kÅ TRANSISTOR COUNT: 3 PROCESS: HFSB Linear Dielectric Isolation Metallization Mask Layout HV400MJ/883 V+ (1) INPUT (2) SINK OUTPUT (3) GROUND (4) (5) GROUND (6) SINK OUTPUT (7) DIODES HV400MJ/883 |
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