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ADG1234 Datasheet(PDF) 1 Page - Analog Devices

Part # ADG1234
Description  Low Capacitance, Triple/Quad SPDT
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADG1234 Datasheet(HTML) 1 Page - Analog Devices

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Low Capacitance, Triple/Quad SPDT
±15 V/+12 V i CMOS™ Switches
ADG1233/ADG1234
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006–2009 Analog Devices, Inc. All rights reserved.
FEATURES
1.5 pF off capacitance
0.5 pC charge injection
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP
Typical power consumption (<0.03 μW)
APPLICATIONS
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG1233 and ADG1234 are monolithic iCMOS analog
switches comprising three independently selectable single-pole,
double throw SPDT switches and four independently selectable
SPDT switches, respectively.
All channels exhibit break-before-make switching action
preventing momentary shorting when switching channels.
An EN input on the ADG1233 and ADG1234 is used to
enable or disable the device. When disabled, all channels are
switched off.
FUNCTIONAL BLOCK DIAGRAMS
ADG1233
S1B
D1
S1A
S2A
IN2
IN1
IN3
D2
S2B
S3A
D3
S3B
SWITCHES SHOWN FOR A LOGIC 1 INPUT
LOGIC
EN
Figure 1.
SWITCHES SHOWN FOR A LOGIC 1 INPUT
ADG1234
S1B
D1
S1A
S2A
IN2
IN1
IN3
D2
S2B
S4B
D4
S4A
S3A
D3
S3B
LOGIC
EN
IN4
Figure 2.
The iCMOS (industrial-CMOS) modular manufacturing process
combines a high voltage complementary metal-oxide semi-
conductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation of
high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lowered power consumption, and reduced
package size.
The ultralow capacitance and charge injection of these multiplexers
make them ideal solutions for data acquisition and sample-and-
hold applications, where low glitch and fast settling are required.
Fast switching speed coupled with high signal bandwidth make the
parts suitable for video signal switching. iCMOS construction
ensures ultralow power dissipation, making the parts ideally
suited for portable and battery-powered instruments.
PRODUCT HIGHLIGHTS
1.
1.5 pF off capacitance (±15 V supply).
2.
0.5 pC charge injection.
3.
3 V logic-compatible digital input, VIH = 2.0 V, VIL = 0.8 V.
4.
16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP.


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