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Die Characteristics

DIE DIMENSIONS:

3750

µm x 2820µm (148 mils x 111 mils)

483

µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS

Glassivation

Type: Nitride (Si3N4) over Silox (SiO2

Nitride Thickness: 4.0kA +/- 0.5kA

Silox Thickness: 12.0kA +/- 1.3kA

Top Metallization

Type: AL Si Cu

Thickness: 16.0kA +/- 2kA

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density:

Transistor Count:

49

Metallization Mask Layout

HS-139RH-T

GND

+IN4

-IN4

V+

-IN1

+IN1

+IN3

-IN3

+IN2

-IN2

OUT4

OUT3

OUT2

OUT1

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

(14)

(13)

(12)

(11)

(10)

HS-139RH-T