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HS1-139RH-T Datasheet(PDF) 2 Page - Intersil Corporation |
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HS1-139RH-T Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 2 page 2 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Die Characteristics DIE DIMENSIONS: 3750 µm x 2820µm (148 mils x 111 mils) 483 µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2 Nitride Thickness: 4.0kA +/- 0.5kA Silox Thickness: 12.0kA +/- 1.3kA Top Metallization Type: AL Si Cu Thickness: 16.0kA +/- 2kA Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 49 Metallization Mask Layout HS-139RH-T GND +IN4 -IN4 V+ -IN1 +IN1 +IN3 -IN3 +IN2 -IN2 OUT4 OUT3 OUT2 OUT1 (9) (8) (7) (6) (5) (4) (3) (2) (1) (14) (13) (12) (11) (10) HS-139RH-T |
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