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HS-1254RH Datasheet(PDF) 2 Page - Intersil Corporation

Part No. HS-1254RH
Description  Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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 2 page
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2
Die Characteristics
DIE DIMENSIONS
Size: 1750
µm x 2330µm (69 mils x 92 mils)
Thickness: 483
µm (19 mils)
GLASSIVATION
Type: Nitride
Thickness: 4k
Å
± 0.5kÅ
METALLIZATION
Metal 1
Type: AlCu(2%)/TiW
Thickness: 8k
Å
± 0.4kÅ
Metal 2
Type: AlCu(2%)
Thickness: 16k
Å
± 0.8kÅ
SUBSTRATE
DI, Bonded Wafer
BACKSIDE FINISH
Silicon
SUBSTRATE POTENTIAL
Floating (Recommend connection to V-)
TRANSISTOR COUNT:
180
Metallization Mask Layout
HS-1254RH
NOTE:
1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).
-IN1
OUT1
-IN2
GND (SEE NOTE 1)
V-
OUT2
V+
NC
NC
+IN1
+IN2
DISABLE1
DISABLE2
V-
HS-1254RH




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