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HP4410DY Datasheet(PDF) 2 Page - Intersil Corporation

Part # HP4410DY
Description  10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HP4410DY Datasheet(HTML) 2 Page - Intersil Corporation

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8-4
Absolute Maximum Ratings
TA = 25
oC, Unless Otherwise Specified
HP4410DY
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±16
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (10
µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
10
50
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
0.02
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TA = 25
oC to 125oC.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
30
-
-
V
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 9)
1
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
-
-
1
µA
VDS = 30V, VGS = 0V, TA = 55
oC-
-
25
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
100
nA
Drain to Source On Resistance
rDS(ON)
ID = 8A, VGS = 4.5V (Figures 6, 8)
-
0.015
0.020
ID = 10A, VGS = 10V (Figures 6, 8)
-
0.011
0.0135
Turn-On Delay Time
td(ON)
VDD = 25V, ID ≅ 1A,
RL = 25Ω, VGEN = 10V,
RGS = 6Ω
-15
30
ns
Rise Time
tr
-
9
20
ns
Turn-Off Delay Time
td(OFF)
-
70
100
ns
Fall Time
tf
-20
80
ns
Total Gate Charge
Qg(TOT)
VDS = 15V, VGS = 10V, ID ≅ 10A
-
35
60
nC
Gate to Source Charge
Qgs
-
7.5
-
nC
Gate to Drain Charge
Qgd
-
5.8
-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 4)
-
1600
-
pF
Output Capacitance
COSS
-
685
-
pF
Reverse Transfer Capacitance
CRSS
-
115
-
pF
Thermal Resistance Junction to Ambient
RθJA
Pulse Width < 10s (Figure 11)
Device Mounted on FR-4 Material
--
50
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 2.3A (Figure 7)
-
0.75
1.1
V
Reverse Recovery Time
trr
ISD = 2.3A, dISD/dt = 100A/µs
-
50
80
ns
HP4410DY


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