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MTB1D7N03ATH8 Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTB1D7N03ATH8 Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 9 page CYStech Electronics Corp. Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : Page No. : 3/9 MTB1D7N03ATH8 CYStek Product Specification Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg *1, 2 - 53 - Qgs *1, 2 - 16 - Qgd *1, 2 - 25 - nC VDS=15V, VGS=4.5V, ID=15A td(ON) *1, 2 - 16 - tr *1, 2 - 21 - td(OFF) *1, 2 - 76 - tf *1, 2 - 32 - ns VDS=15V, ID=1A, VGS=10V, RG=3.3Ω Rg - 1.6 - Ω VGS=15mV, VDS=0V, f=1MHz Source-Drain Diode IS *1 - - 90 ISM *3 - - 360 A VSD *1 - 0.79 1.2 V IS=20A, VGS=0V trr - 28 - ns Qrr - 23 - nC IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm |
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