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MTN12N30FP Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTN12N30FP
Description  N-Channel Enhancement Mode Power MOSFET
Download  10 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTN12N30FP Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C993FP
Issued Date : 2014.12.15
Revised Date :
Page No. : 4/ 10
MTN12N30FP
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
5
10
15
20
02
46
8
10
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
VDS, Drain-Source Voltage(V)
10V,9V,8V,7V,6V
5V
V =4.5V
GS
Static Drain-Source On-State resistance vs Drain Current
100
1000
10000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=7V
VGS=10V
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02468
1
IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
200
400
600
800
1000
1200
024
68
10
Drain-Source On-State Resistance vs Junction Tempearture
0
0.5
1
1.5
2
2.5
3
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=10V, ID=6A
RDS(ON)@Tj=25°C : 248mΩtyp.
VGS, Gate-Source Voltage(V)
ID=6A


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