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MTE130N20J3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTE130N20J3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 4/9 MTE130N20J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 30 02 4 68 10 VDS, Drain-Source Voltage(V) 10V, 9V, 8V, 7V VGS=4.5V VGS=5V VGS=6V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V VGS=6V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 100 200 300 400 500 600 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, ID=9A RDS(ON)@Tj=25°C :156mΩ typ VGS, Gate-Source Voltage(V) ID=9A |
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