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MTD120C10J4-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTD120C10J4-0-T3-G
Description  N & P-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTD120C10J4-0-T3-G Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 5/13
MTD120C10J4
CYStek Product Specification
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0.1
1
10
100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=250μA
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
ID, Drain Current(A)
VDS=10V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
02
46
8
1
Qg, Total Gate Charge(nC)
0
VDS=80V
ID=2A
Maximum Safe Operating Area
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
DC
10ms
1ms
100
μs
RDS(ON)
Limit
TA=25°C, Tj=175°C, VGS=10V
RθJA=90°C/W,Single Pulse
1s
100ms
Maximum Drain Current vs Junction Temperature
0
0.5
1
1.5
2
2.5
25
50
75
100
125
150
175
TJ, Junction Temperature(°C)
TA=25°C, VGS=10V
RθJA=90°C/W


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