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MTBA6C15Q8-0-T3-G Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTBA6C15Q8-0-T3-G Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 12 page CYStech Electronics Corp. Spec. No. : C938Q8 Issued Date : 2014.12.01 Revised Date : Page No. : 4/12 MTBA6C15Q8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 0 2 4 6 8 10 012 345 VDS, Drain-Source Voltage(V) VGS=2.5V 10V, 9V, 8V, 7V, 6V, 5V,4V,3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=3V VGS=4.5V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02468 1 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 50 100 150 200 250 300 350 400 450 500 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, ID=1.8A RDS(ON)@Tj=25°C : 169mΩ typ. VGS, Gate-Source Voltage(V) ID=1.8A |
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