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HIP2060 Datasheet(PDF) 2 Page - Intersil Corporation

Part # HIP2060
Description  60V, 10A Half Bridge Power MOSFET Array
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HIP2060 Datasheet(HTML) 2 Page - Intersil Corporation

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HIP2060
UNITS
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . VDS
60
V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
60
V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISD
10
A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . IDM
25
A
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .IDS
10
A
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . EAS
100
mJ
Continuous Power Dissipation at TC = 25
oC (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P
D
46
W
Continuous Power Dissipation, Derate above TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.37
W/oC
Thermal Information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ
JA
60
oC/W
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC
-40 to 125
oC
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-40 to 150
oC
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . VD1S2
60
V
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. VDD = 25V, Start TJ = 25
oC, L = 1.5mH, R
GS = 50Ω, R = 0. See Figures 2, 12, and 13.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BVDSS
ID = 100µA, VGS = 0V
TC = -40
oC to
125oC
60
-
-
V
TC = 25
oC-
70
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
1.5
2.3
2.7
V
Drain1-Source2 Breakdown Voltage
(Across D1)
BVD1S2
ID1S2 = 1µA,
VG1S1, VG2S2 = 0V
TC = 25
oC
-
105
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 60V
VGS = 0V
TC = 25
oC-
-
1
µA
Drain1-Source2 Current (Through D1)
ID1S2
VD1S2 = 60V
VG1S1 = 0V, VG2S2 =0V
TC = 25
oC
-
0.3
1
µA
TC = 125
oC-
1
-
µA
Drain-Source On-State Voltage
(Note 4)
VDS(ON)
ID = 10A, VGS = 15V
-
0.9
1.25
V
ID = 10A, VGS = 10V
-
1.1
1.5
V
Forward Gate Current, Drain Short
Circuited to Source
IGSSF
VDS = 0V, VGS = 20V
-
-
100
nA
Reverse Gate Current, Drain Short
Circuited to Source
IGSSR
VDS = 0V, VGS = -20V
-
-
-100
nA
Drain-Source On Resistance (Note 4)
rDS(ON)
VGS = 15V, ID = 10A
TC = 25
oC
-
0.09
0.135
VGS = 15V, ID = 10A
TC = 125
oC
-
0.15
0.21
VGS = 10V, ID = 10A
TC = 25
oC
-
0.11
0.15
VGS = 10V, ID = 10A
TC = 125
oC
-
0.19
0.25
Forward Transconductance (Note 4)
gfs
VDS = 15V, ID = 5A
-
4.5
-
S
HIP2060


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