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HIP2060 Datasheet(PDF) 2 Page - Intersil Corporation |
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HIP2060 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HIP2060 UNITS Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . VDS 60 V Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISD 10 A Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .IDS 10 A Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ Continuous Power Dissipation at TC = 25 oC (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P D 46 W Continuous Power Dissipation, Derate above TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37 W/oC Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ JA 60 oC/W Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC -40 to 125 oC Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . VD1S2 60 V NOTES: 1. Pulse width limited by maximum junction temperature. 2. Drain current limited by package construction. 3. VDD = 25V, Start TJ = 25 oC, L = 1.5mH, R GS = 50Ω, R = 0. See Figures 2, 12, and 13. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 100µA, VGS = 0V TC = -40 oC to 125oC 60 - - V TC = 25 oC- 70 - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 1.5 2.3 2.7 V Drain1-Source2 Breakdown Voltage (Across D1) BVD1S2 ID1S2 = 1µA, VG1S1, VG2S2 = 0V TC = 25 oC - 105 - V Zero Gate Voltage Drain Current IDSS VDS = 60V VGS = 0V TC = 25 oC- - 1 µA Drain1-Source2 Current (Through D1) ID1S2 VD1S2 = 60V VG1S1 = 0V, VG2S2 =0V TC = 25 oC - 0.3 1 µA TC = 125 oC- 1 - µA Drain-Source On-State Voltage (Note 4) VDS(ON) ID = 10A, VGS = 15V - 0.9 1.25 V ID = 10A, VGS = 10V - 1.1 1.5 V Forward Gate Current, Drain Short Circuited to Source IGSSF VDS = 0V, VGS = 20V - - 100 nA Reverse Gate Current, Drain Short Circuited to Source IGSSR VDS = 0V, VGS = -20V - - -100 nA Drain-Source On Resistance (Note 4) rDS(ON) VGS = 15V, ID = 10A TC = 25 oC - 0.09 0.135 Ω VGS = 15V, ID = 10A TC = 125 oC - 0.15 0.21 Ω VGS = 10V, ID = 10A TC = 25 oC - 0.11 0.15 Ω VGS = 10V, ID = 10A TC = 125 oC - 0.19 0.25 Ω Forward Transconductance (Note 4) gfs VDS = 15V, ID = 5A - 4.5 - S HIP2060 |
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