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MTA55N20J3-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTA55N20J3-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 2/9 MTA55N20J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TC=25 °C, VGS=10V ID 25 Continuous Drain Current @ TC=100 °C, VGS=10V ID 17.7 Pulsed Drain Current *1 IDM 60 Avalanche Current IAS 20 A Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω EAS 320 Repetitive Avalanche Energy@ L=0.1mH (Note 2) EAR 4.6 mJ Total Power Dissipation @TC=25℃ 107 Total Power Dissipation @TA=25℃ Pd 1.14 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.4 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 200 - - V VGS=0V, ID=250μA VGS(th) 0.5 0.8 1.5 V VDS =VGS, ID=250μA IGSS - - ± 100 nA VGS=±20V, VDS=0V - - 1 VDS =200V, VGS =0V IDSS - - 25 μA VDS =160V, VGS =0V, TJ=125 °C - 52 62 VGS =10V, ID=11A RDS(ON) *1 - 52 70 mΩ VGS =4.5V, ID=5A GFS *1 - 40 - S VDS =15V, ID=11A Dynamic Qg *1, 2 - 100 - Qgs *1, 2 - 8.6 - Qgd *1, 2 - 18.4 - nC VDS=160V, ID=20A, VGS=10V td(ON) *1, 2 - 16.8 - tr *1, 2 - 51 - td(OFF) *1, 2 - 528 - tf *1, 2 - 309 - ns VDS=100V, ID=20A, VGS=10V, RG=25Ω |
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