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SNN0630Q Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SNN0630Q Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 8 page Rev. date: 23-NOV-12 KSD-T5A015-000 www.auk.co.kr 1 of 8 SNN0630Q Advanced N-Ch Trench MOSFET S G D D Portable Equipment Application Features Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested Halogen free and RoHS compliant device Ordering Information Part Number Marking Package SNN0630Q SNN0630 SOT-223 Marking Information Absolute maximum ratings (T C=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Drain current (DC) * ID Tc=25C 5.8 A Tc=70C 4.64 A Drain current (Pulsed) * IDM 23.2 A Single pulsed avalanche energy (Note 2) EAS 72 mJ Repetitive avalanche current (Note 1) IAR 5.8 A Repetitive avalanche energy (Note 1) EAR 0.2 mJ Power dissipation PD 2 W Junction temperature TJ 150 C Storage temperature range Tstg -55~150 C * Limited only maximum junction temperature SOT-223 Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code SNN0630 YWW |
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