SMN01Z30Q datasheet(1/8 Pages) KODENSHI

Part #	SMN01Z30Q

Description	Advanced N-Ch Power MOSFET

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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KSD-T5A005-000

1

SMN01Z30Q

Advanced N-Ch Power MOSFET

PIN Connection

S

SOT-223

G

D

G

S

D

SWITCHING REGULATOR APPLICATIONS

Features

 High Voltage : BVDSS=300V(Min.)

 Low Crss : Crss=3.2pF(Typ.)

 Low gate charge : Qg=2.9nC(Typ.)

 Low RDS(on) : RDS(on)=8Ω(Max.)

Ordering Information

Marking Diagram

Absolute maximum ratings (T

C=25C unless otherwise noted)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

300

V

Gate-source voltage

VGSS

20

V

Drain current (DC) *

ID

TC=25C

1.3

A

TC=100C

0.78

A

Drain current (Pulsed) *

IDM

5.2

A

Power dissipation

PD

2.1

W

Avalanche current (Single)



IAS

1.3

A

Single pulsed avalanche energy



EAS

182.6

mJ

Avalanche current (Repetitive)



IAR

1.3

A

Repetitive avalanche energy



EAR

0.2

mJ

Junction temperature

TJ

150

C

Storage temperature range

Tstg

-55~150

* Limited by maximum junction temperature

Characteristic

Symbol

Typ.

Max.

Unit

Thermal

resistance

Junction-ambient

Rth(J-A)

-

60

C/W

Type No.

Marking

Package Code

SMN01Z30Q

SMN01Z30

SOT-223

Column 1 : Device Code

Column 2 : Production Information

e.g.) YWW

-. Y : Year Code

-. WW : Week Code

SMN01Z30

YWW

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SMN01Z30Q Datasheet(PDF) 1 Page - KODENSHI_AUK CORP.

SMN01Z30Q Datasheet(HTML) 1 Page - KODENSHI_AUK CORP.

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