KX6N70F datasheet(3/4 Pages) KEXIN

Part #	KX6N70F

Description	N-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel Enhancement MOSFET

KX6N70F

■

Typical Characterisitics

V

GS

Top :

15 0 V

10

-1

10

0

10

1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

※

Notes :

1. 250μ s Pulse Test

2. T

C = 25℃

10

0

10

1

150

oC

25

oC

-55

oC

※

Notes :

1. V

DS = 40V

2. 250μ s Pulse Test

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10

-1

10

0

10

1

V

DS, Drain-Source Voltage [V]

2

4

6

8

10

-1

μ

V

GS, Gate-Source Voltage [V]

4.0

4.5

10

1

5

1

0

1

5

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS = 20V

V

GS = 10V

※

Note : T

J = 25℃

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

I

D, Drain Current [A]

V

SD, Source-Drain voltage [V]

1200

1400

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Notes ;

10

12

V

DS = 250V

V

DS = 100V

10

-1

10

0

10

1

0

200

400

600

800

1000

※

Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

0

2

4

6

8

V

DS = 400V

※

Note : I

D = 6A

Q

G, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS,

g [ ]

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