HGT1S20N35G3VLS datasheet(2/6 Pages) INTERSIL

Part #	HGT1S20N35G3VLS

Description	20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

2 / 6 page

3-67

Speciﬁcations HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Electrical Speciﬁcations

TC = +25

oC, Unless Otherwise Speciﬁed

PARAMETERS

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP

MAX

Collector-Emitter Breakdown Voltage

BVCES

IC = 10mA,

VGE = 0V

TC = +175

oC

310

345

380

V

TC = +25

oC

320

350

380

V

TC = -40

oC

320

355

390

V

Collector-Emitter Breakdown Voltage

BVCER

IC = 10mA

VGE = 0V

RGE = 1kΩ

TC = +175

oC

300

340

375

V

TC = +25

oC

315

345

375

V

TC = -40

oC

315

350

390

V

Gate-Emitter Plateau Voltage

VGEP

IC = 10A

VCE = 12V

TC = +25

oC

-

3.7

-

V

Gate Charge

QG(ON)

IC = 10A

VGE = 5V

VCE = 12V

TC = +25

oC

-

28.7

-

nC

Collector-Emitter Clamp Bkdn. Voltage

BVCE(CL)

IC = 10A

RG = 0Ω

TC = +175

oC

325

360

395

V

Emitter-Collector Breakdown Voltage

BVECS

IC = 10mA

TC = +25

oC20

32

-

V

Collector-Emitter Leakage Current

ICES

VCE = 250V

TC = +25

oC-

-

5

µA

VCE = 250V

TC = +175

oC

-

250

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 10A

VGE = 4.5V

TC = +25

oC

-

1.3

1.6

V

TC = +175

oC

-

1.25

1.5

V

IC = 20A

VGE = 5.0V

TC = +25

oC

-

1.6

2.8

V

TC = +175

oC

-

1.9

3.5

V

Gate-Emitter Threshold Voltage

VGE(TH)

IC = 1mA

VCE = VGE

TC = +25

oC

1.3

1.8

2.3

V

Gate Series Resistance

R1

TC = +25

oC

-

1.0

-

k

Ω

Gate-Emitter Resistance

R2

TC = +25

oC

101725

k

Ω

Gate-Emitter Leakage Current

IGES

VGE = ±10V

±400

±590

±1000

µA

Gate-Emitter Breakdown Voltage

BVGES

IGES = ±2mA

±12

±14

-

V

Current Turn-Off Time-Inductive Load

tD(OFF)I +

tF(OFF)I

IC = 10A, RG = 25Ω,

L = 550 H, R L = 26.4Ω, VGE = 5V,

VCL = 300V, TC = +175

oC

-15

30

µs

Inductive Use Test

ISCIS

L = 2.3mH,

VG = 5V,

RG = 0Ω

TC = +175

oC18

-

A

TC = +25

oC26

-

A

Thermal Resistance

RθJC

-

1.0

oC/W

Similar Part No. - HGT1S20N35G3VLS

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGT1S20N35G3VLS	209Kb / 8P	20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

More results

Similar Description - HGT1S20N35G3VLS

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTP20N35G3VL	209Kb / 8P	20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
	HGT1S20N36G3VL	256Kb / 7P	20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
	HGTP14N36G3VL	224Kb / 8P	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Intersil Corporation	HGTP14N36G3VL	110Kb / 6P	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs June 1995
Fairchild Semiconductor	HGT1S14N37G3VLS	159Kb / 6P	14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
Fairchild Semiconductor	HGTP14N41G3VLS	193Kb / 6P	14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs
Intersil Corporation	HGTP14N40F3VL	85Kb / 5P	14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995
	HGTP15N40C1	35Kb / 5P	15A, 20A, 400V and 500V N-Channel IGBTs April 1995
	HUF76009P3	243Kb / 11P	20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
	HUF76013P3	245Kb / 11P	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs

More results

HGT1S20N35G3VLS Datasheet(PDF) 2 Page - Intersil Corporation

HGT1S20N35G3VLS Datasheet(HTML) 2 Page - Intersil Corporation

Similar Part No. - HGT1S20N35G3VLS

Similar Description - HGT1S20N35G3VLS

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL