HGTP2N120BN datasheet(3/7 Pages) INTERSIL

Part #	HGTP2N120BN

Description	12A, 1200V, NPT Series N-Channel IGBT

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Manufacturer	INTERSIL [Intersil Corporation]

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3

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 150

oC

ICE = 2.3A

VCE = 0.8 BVCES

VGE = 15V

RG = 51Ω

L = 5mH

Test Circuit (Figure 18)

-25

30

ns

Current Rise Time

trI

-11

15

ns

Current Turn-Off Delay Time

td(OFF)I

-

195

260

ns

Current Fall Time

tfI

-

160

200

ns

Turn-On Energy (Note 4)

EON1

-83

-

µJ

Turn-On Energy (Note 4)

EON2

-

725

1000

µJ

Turn-Off Energy (Note 5)

EOFF

-

280

380

µJ

Thermal Resistance Junction To Case

RθJC

-

1.2

oC/W

NOTES:

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the

turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

TC, CASE TEMPERATURE (

oC)

50

0

4

25

75

100

125

150

10

12

6

2

VGE = 15V

8

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1400

10

0

2

4

600

800

400

200

1000

1200

0

12

14

8

6

TJ = 150

oC, R

G = 51Ω, VGE = 15V, L = 1mH

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 150

oC, R

G = 51Ω, L = 5mH, VCE = 960V

0.5

10

5.0

2.0

50

1.0

100

TC = 75

oC, V

GE = 15V, IDEAL DIODE

TC

VGE

15V

110oC

110oC 12V

TC

VGE

15V

75oC

12V

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RØJC = 1.2

oC/W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON2 + EOFF)

VGE, GATE TO EMITTER VOLTAGE (V)

12

13

14

15

5

10

15

20

25

30

40

tSC

ISC

25

35

VCE = 840V, RG = 51Ω, TJ = 125

oC

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