SUF1002 datasheet(2/8 Pages) KODENSHI

Part #	SUF1002

Description	Dual N-ch Trench MOSFET

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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2 / 8 page

Rev. date: 29-OCT-13

KSD-T7F001-001

www.auk.co.kr

2 of 8

Thermal Characteristics (T

amb=25℃, Unless otherwise noted)

Characteristic

Symbol

Ratings

Unit

Thermal resistance, junction to ambient 1)

Rth(j-a)

62.5

C/W

Electrical Characteristics (T

amb=25℃, Unless otherwise noted)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

BVDSS

ID=250uA, VGS=0

30

-

V

Gate threshold voltage

VGS(th)

ID=250uA, VDS=VGS

1

-

3

V

Drain-source cut-off current

IDSS

VDS=30V, VGS=0V

-

1

uA

Gate leakage current

IGSS

VDS=0V, VGS=20V

-

100

nA

Drain-source on-resistance

RDS(ON)

VGS=10V, ID=2.9A

-

24

30

m

VGS=5V, ID=2.9A

-

28

34

Forward transfer conductance 5)

gfs

VDS=5V, ID=5.8A

-

12

-

S

Input capacitance

Ciss

VGS=0V, VDS=10V,

f=1MHz

-

370

560

pF

Output capacitance

Coss

-

60

90

Reverse transfer capacitance

Crss

-

36

54

Turn-on delay time 4, 5)

td(on)

VDS=15V, ID=5.8A,

RG=10Ω

-

1.2

-

ns

Rise time 4, 5)

tr

-

1.1

-

Turn-off delay time 4, 5)

td(off)

-

2.5

-

Fall time 4, 5)

tf

-

1.1

-

Total gate charge 4, 5)

Qg

VDS=15V, VGS=5V

ID=18A

-

4.2

6.3

nC

Gate-source charge 4, 5)

Qgs

-

0.9

1.4

Gate-drain charge 4, 5)

Qgd

-

1.4

2.1

Source-Drain Diode Rating and Characteristics (T

amb=25℃, Unless otherwise specified)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Maximum diode forward current

Is

Integral reverse diode

in the MOSFET

-

1.5

A

Source current (Pulsed) 2)

ISM

-

6

A

Forward voltage 5)

VSD

VGS=0V, IS=1A

-

1

V

Reverse recovery time

trr

IS=1.5A, dis/dt=100A/us

-

90

-

Ns

Reverse recovery charge

Qrr

-

0.5

-

uC

* Note:

1) Device mounted on a glass-epoxy board

2) Repetitive rating: Pulse width limited by maximum junction temperature.

3) L=3.4mH, IAS=5.8A, VDD=15V, RG=25

4) Pulse Test: Pulse width ≤ 300us, Duty cycle ≤ 2%.

5) Essentially independent of operating temperature

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