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HGT1S1N120BNDS Datasheet(PDF) 4 Page - Intersil Corporation

Part # HGT1S1N120BNDS
Description  5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGT1S1N120BNDS Datasheet(HTML) 4 Page - Intersil Corporation

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4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
68
10
1
3
5
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VGE = 13V
TC = 150
oC
TC = 25
oC
TC = -55
oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
02
468
10
1
6
0
5
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
µs
TC = -55
oC
TC = 150
oC
TC = 25
oC
1000
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5
12
0.5
1200
2.5
0
3
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150
oC, V
GE = 13V
TJ = 150
oC, V
GE = 15V
TJ = 25
oC, V
GE = 15V
TJ = 25
oC, V
GE = 13V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
1
1.5
2
0.5
50
150
100
200
250
2.5
3
TJ = 150
oC, V
GE = 13V OR 15V
TJ = 25
oC, V
GE = 13V OR 15V
RG = 82Ω, L = 4mH, VCE = 960V
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
0
1.5
2
2.5
3
8
12
20
16
24
RG = 82Ω, L = 4mH, VCE = 960V
TJ
VGE
25oC
13V
150oC
13V
25oC
15V
150oC
15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
4
8
24
20
12
2
0.5
16
1.5
2.5
28
3
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 25
oC, T
J = 150
oC, V
GE = 13V
TJ = 25
oC, T
J = 150
oC, V
GE = 15V
HGTP1N120BND, HGT1S1N120BNDS


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