HGTP10N40C1 datasheet(2/7 Pages) INTERSIL

Part #	HGTP10N40C1

Description	10A, 12A, 400V and 500V N-Channel IGBTs

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

2 / 7 page

3-16

Speciﬁcations HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

PARAMETERS

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

HGTH12N40C1, E1,

HGTP10N40C1, E1

HGTH12N50C1, E1,

HGTP10N50C1, E1

MIN

MAX

MIN

MAX

Collector-Emitter Breakdown

Voltage

BVCES

IC = 1mA, VGE = 0

400

-

500

-

V

Gate Threshold Voltage

VGE(TH)

VGE = VCE, IC = 1mA

2.0

4.5

3 (Typ)

2.0

4.5

3 (Typ)

V

Zero Gate Voltage Collector

Current

ICES

VCE = 400V, TC = +25

oC

-

250

-

µA

VCE = 500V, TC = +25

oC

---

250

µA

VCE = 400V, TC = +125

oC

-

1000

-

µA

VCE = 500V, TC = +125

oC

-

1000

µA

Gate-Emitter Leakage Current

IGES

VGE = ±20V, VCE = 0

-

100

-

100

nA

Collector-Emitter on Voltage

VCE(ON)

IC = 10A, VGE = 10V

-

2.5

-

2.5

V

IC = 17.5A, VGE = 20V

-

3.2

-

3.2

V

Gate-Emitter Plateau Voltage

VGEP

IC = 5A, VCE = 10V

-

6 (Typ)

-

6 (Typ)

V

On-State Gate Charge

QG(ON)

IC = 5A, VCE = 10V

-

19 (Typ)

-

19 (Typ)

nC

Turn-On Delay Time

tD(ON)I

IC = 10A, VCE(CLP) = 300V,

L = 50

µH, T

J = +100

oC,

VGE = 10V, RG = 50Ω

-

50

-

50

ns

Rise Time

tRI

-

50

-

50

ns

Turn-Off Delay Time

tD(OFF)I

-

400

-

400

ns

Fall Time

tFI

40E1, 50E1

680 (Typ)

1000

680 (Typ)

1000

ns

40C1, 50C1

400

500

400

500

ns

Turn-Off Energy Loss per Cycle

(Off Switching Dissipation =

WOFF x Frequency)

WOFF

IC = 10A, VCE(CLP) = 300V,

L = 50

µH, T

J = +100

oC,

VGE = 10V, RG = 50Ω

40E1, 50E1

680 (Typ)

µJ

40C1, 50C1

400 (Typ)

µJ

Thermal Resistance

Junction-to-Case

RθJC

HGTH, HGTM

-

1.67

-

1.67

oC/W

HGTP

-

2.083

-

2.083

oC/W

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,567,641

4,587,713

4,598,461

4,605,948

4,618,872

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

Similar Part No. - HGTP10N40C1

Manufacturer	Part #	Datasheet	Description
Intersil Corporation	HGTP10N40C1D	37Kb / 6P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995

More results

Similar Description - HGTP10N40C1

Manufacturer	Part #	Datasheet	Description
Intersil Corporation	HGTD10N40F1	33Kb / 4P	10A, 400V and 500V N-Channel IGBTs March 1997
	HGTD6N40E1	32Kb / 4P	6A, 400V and 500V N-Channel IGBTs March 1997
	2N6975	40Kb / 4P	5A, 400V and 500V N-Channel IGBTs April 1995
	HGTP15N40C1	35Kb / 5P	15A, 20A, 400V and 500V N-Channel IGBTs April 1995
	HGTP10N40F1D	34Kb / 5P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
	HGTP10N40C1D	37Kb / 6P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
	HGTH20N40C1D	35Kb / 6P	20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
Alpha & Omega Semicondu...	AOT12N50	180Kb / 6P	500V, 12A N-Channel MOSFET
Alpha & Omega Semicondu...	AOB12N50	262Kb / 6P	500V, 12A N-Channel MOSFET

More results

HGTP10N40C1 Datasheet(PDF) 2 Page - Intersil Corporation

HGTP10N40C1 Datasheet(HTML) 2 Page - Intersil Corporation

Similar Part No. - HGTP10N40C1

Similar Description - HGTP10N40C1

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL