3-71

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

HGTG20N50C1D

20A, 500V N-Channel IGBT

with Anti-Parallel Ultrafast Diode

Features

• 20A, 500V

• Latch Free Operation

• Typical Fall Time < 500ns

• High Input Impedance

• Low Conduction Loss

• With Anti-Parallel Diode

Description

The IGBT is a MOS gated high voltage switching device

combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

recovery characteristic.

IGBTs are ideal for many high voltage switching applications

operating at frequencies where low conduction losses are

essential, such as: AC and DC motor controls, power

supplies and drivers for solenoids, relays and contractors.

PACKAGING AVAILABILITY

PART NUMBER

PACKAGE

BRAND

HGTG20N50C1D

TO-247

G20N50C1D

NOTE: When ordering, use the entire part number.

April 1995

Package

JEDEC STYLE TO-247

Terminal Diagram

COLLECTOR

GATE

COLLECTOR

EMITTER

(BOTTOM SIDE

METAL)

C

G

E

HGTG20N50C1D

UNITS

500

V

500

V

C25

26

A

C90

20

A

35

A

±20

V

F25

26

A

F90

20

A

D

75

W

0.8

-55 to +150

260

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,567,641

4,587,713

4,598,461

4,605,948

4,618,872

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

File Number

2796.3