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HGTG20N120CND Datasheet(PDF) 1 Page - Intersil Corporation |
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HGTG20N120CND Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 7 page 1 HGTG20N120CND 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49305. Features • 63A, 1200V, TC = 25 oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ = 150 oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 Symbol Ordering Information PART NUMBER PACKAGE BRAND HGTG20N120CND TO-247 20N120CND NOTE: When ordering, use the entire part number. G C E E G INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet January 2000 File Number 4535.2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 |
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