HFA3135 datasheet(3/5 Pages) INTERSIL

Part #	HFA3135

Description	Ultra High Frequency Matched Pair Transistors

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Manufacturer	INTERSIL [Intersil Corporation]

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3 / 5 page

4-452

DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)

Noise Figure

NF

f = 1.0GHz, IC = 10mA,

1V

≤ VCE ≤ 5V, ZS = 50Ω

B

-

2.4

-

dB

f = 1.0GHz, IC = 1mA,

1V

≤ VCE ≤ 5V, ZS = 50Ω

B

-

2.6

-

dB

Current Gain-Bandwidth Product

(Note 5)

fT

IC = 10mA, VCE = 5V

B

-

8.5

-

GHz

IC = 1mA, VCE = 5V

B

-

3

-

GHz

Power Gain-Bandwidth Product

fMAX

IC = 10mA, VCE = 5V

B

-

7.5

-

GHz

Base-to-Emitter Capacitance

VBE = -0.5V

B

-

600

-

fF

Collector-to-Base Capacitance

VCB = 3V

B

-

500

-

fF

Electrical Speciﬁcations

TA = 25

oC

PARAMETER

SYMBOL

TEST CONDITIONS

TEST

LEVEL

(NOTE 3)

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS FOR HFA3135 (PNP)

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC = -10µA, IE = 0

A

12

21

-

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC = -100µA, IB = 0

A

4

14

-

V

V(BR)CER

IC = -100µA, RB = 10kΩ

A11

23

-

V

Emitter-to-Base Breakdown Voltage (Note 4)

V(BR)EBO

IE = -10µA, IC = 0

B

-

5

-

V

Collector-Cutoff-Current

ICEO

VCE = -6V, IB = 0

A

-5

-

5

nA

Collector-Cutoff-Current

ICBO

VCB = -8V, IE = 0

A

-5

-

5

nA

Emitter-Cutoff-Current

IEBO

VEB = -1V, IC = 0

B

-

TBD

-

pA

Collector-to-Collector Leakage

B

-

1

-

nA

Collector-to-Emitter Saturation Voltage

VCE(SAT)

IC = -10mA, IB = -1mA

A

-

150

250

mV

Base-to-Emitter Voltage

VBE

IC = -10mA, VCE = -2V

A

-

850

1000

mV

Q1 to Q2 Base-to-Emitter Voltage Match

∆VBE

IC = -10mA, VCE = -2V

A

-

1

6

mV

IC = -1mA, VCE = -2V

A

-

1

6

mV

IC = -0.1mA, VCE = -2V

A

-

2

6

mV

DC Forward-Current Transfer Ratio

hFE

IC = -10mA, VCE = -2V

A

15

40

125

IC = -1mA, VCE = -2V

A

15

47

125

IC = -0.1mA, VCE = -2V

A

15

52

125

IC = -10mA, VCE = -5V

A

15

47

125

IC = -1mA, VCE = -5V

A

15

53

125

IC = -0.1mA, VCE = -5V

A

15

57

125

Q1 to Q2 Current Gain Match

∆hFE

-1mA

≤ IC ≤ -10mA,

-1V

≤ VCE ≤ -5V

A-

1

8

%

Early Voltage

VA

IC = -1mA, ∆VCE = -3V

A

15

24

-

V

Base-to-Emitter Voltage Drift

IC = -10mA

C

-

-1.4

-

mV/oC

Electrical Speciﬁcations

TA = 25

oC

PARAMETER

SYMBOL

TEST CONDITIONS

TEST

LEVEL

(NOTE 3)

MIN

TYP

MAX

UNITS

HFA3134, HFA3135

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