MMBTA42W_15 datasheet(1/2 Pages) KEXIN

Part #	MMBTA42W

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

■

Features

●

Collector-emitter voltage VCE = 300V

●

Collector current IC = 500mA

●

NPN high voltage transistors

1 Base

2 Emitter

3 Collector

1

BASE

3

COLLECTOR

2

EMITTER

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

300

Collector - Emitter Voltage

VCEO

300

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

500

mA

Collector Power Dissipation

(Note.1)

PC

150

mW

Thermal resi stance from junct ion to ambient (Note.1)

RθJA

550

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-65 to 150

V

℃

Note.1:Mounted on an FR4 PCB, single-sided copper, mini pad.

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

300

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

300

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 200 V , IE= 0

100

Emitter cut-off current

IEBO

VEB= 6V , IC=0

100

Collector-emitter saturation voltage

VCE(sat) IC=20 mA, IB=2mA

0.5

Base - emitter saturation voltage

VBE(sat) IC=20 mA, IB=2mA

0.9

hFE(1)

VCE= 10V, IC= 1mA

60

hFE(2)

VCE= 10V, IC= 10mA

100

hFE(3)

VCE= 10V, IC= 30mA

70

Collector output capacitance

Cob

VCB= 20V, IE= 0,f=1MHz

3

pF

Transition frequency

fT

VCE= 20V, IC= 10mA,f=100MHz

50

MHz

V

nA

DC current gain

■

Marking

1D

NPN Transistors

MMBTA42W (KMBTA42W)

200

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MMBTA42W Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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