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Die Characteristics

DIE DIMENSIONS:

(2642

µm x 2184µm x 533µm ±51.0µm)

104 x 86 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11.0k

Å

SUBSTRATE POTENTIAL:

Unbiased Silicon on Sapphire

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

676

PROCESS:

CMOS SOS

Metallization Mask Layout

HCTS160T

MR

(1)

CD

(2)

P0 (3)

P1 (4)

P2 (5)

P3 (6)

PE (7)

(8)

(9)

SPE

(10)

TE

(11) Q3

(12) Q2

(13) Q1

(14) Q0

(15) TC

GND

(16)

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCTS160 is TA14445A.

HCTS160T