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2SA1681 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1681 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1681 ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SC4409 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Base Current IB -0.2 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA, IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1mA,IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100 u A, IC=0 -6 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50 mA -1.2 hFE(1) VCE= -2V, IC= -100 mA 120 400 hFE(2) VCE= -2V, IC= -1.5 A 40 Turn-on time ton 0.1 Storage time tstg 0.3 Fall time t f 0.1 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 23 pF Transition frequency fT VCE= -2V, IC= -100 mA 100 MHz DC current gain us V uA V ■ Marking Marking L*A −30 V IB2 IB1 20 μs IB1 IB2 −IB1 = IB2 = 0.05 A, DUTY CYCLE ≤ 1% OUTPUT INPUT |
Similar Part No. - 2SA1681_15 |
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Similar Description - 2SA1681_15 |
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