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FSYC9160D1 Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSYC9160D1
Description  Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYC9160D1 Datasheet(HTML) 4 Page - Intersil Corporation

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4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
40
60
-100
10
1
-1
VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
100
500
TC = 25
oC
100
µs
1ms
10ms
-300
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
CHARGE
VG
QGS
BASIC GATE CHARGE WAVEFORM
-12V
QGD
QG
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = -12V, ID = 30A
10-5
10-4
10-3
10-2
10-1
100
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (s)
1
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
101
0.05
0.5
0.02
0.1
0.01
0.2
FSYC9160D, FSYC9160R


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