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2SD1618-S Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1618-S Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1618 ■ Features ● Low collector-to-emitter saturation voltage. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1118 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.7 Collector Current - Pulse ICP 1.5 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W Note.1:Mounted on ceramic board (250mm ×0.8mm) 2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA, IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA,RBE= ∞ 15 Emitter - base breakdown voltage VEBO IE= 100 uA, IC= 0 5 Collector-base cut-off current ICBO VCB= 15 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 IC=5 mA, IB=0.5 mA 10 25 IC=100 mA, IB=10 mA 30 80 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10 mA 0.8 1.2 V VCE= 2V, IC= 50 mA 140 560 VCE= 2V, IC= 500 mA 60 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 8 pF Transition frequency fT VCE= 10V, IC= 50mA 250 MHz V uA DC current gain hFE Collector-emitter saturation voltage VCE(sat) mV ■ Classification of hfe(1) Type 2SD1618-S 2SD1618-T 2SD1618-U Range 140-280 200-400 280-560 Marking DA S* DA T* DA U* |
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