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FSYC260R Datasheet(PDF) 2 Page - Intersil Corporation

Part # FSYC260R
Description  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYC260R Datasheet(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings TC =25oC, Unless Otherwise
FSYC260D, FSYC260R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain Current
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
46
A
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
29
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
138
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
208
W
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
83
W
Derated Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . .IAS
138
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
46
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
138
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 160V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 46A
-
-
2.42
V
On Resistance
rDS(ON)12
ID = 29A,
VGS = 12V
TC = 25
oC
-
0.042
0.050
TC = 125
oC
-
-
0.087
Turn-On Delay Time
td(ON)
VDD = 100V, ID = 46A,
RL = 2.17Ω, VGS = 12V,
RGS = 2.35Ω
-
-
45
ns
Rise Time
tr
-
-
160
ns
Turn-Off Delay Time
td(OFF)
-
-
100
ns
Fall Time
tf
-
-
25
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 100V,
ID = 46A
-
-
270
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
160
180
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
8.6
nC
Gate Charge Source
Qgs
-29
41
nC
Gate Charge Drain
Qgd
-84
94
nC
Plateau Voltage
V(PLATEAU) ID = 46A, VDS = 15V
-
8
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
4200
-
pF
Output Capacitance
COSS
-
890
-
pF
Reverse Transfer Capacitance
CRSS
-
285
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.6
oC/W
FSYC260D, FSYC260R


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