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FSYA254R4 Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSYA254R4
Description  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYA254R4 Datasheet(HTML) 4 Page - Intersil Corporation

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4-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING CURVE
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
10
26
10
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
1
µs
100ms
100
TC = 25
oC
1000
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250
µs, VGS = 12V, ID = 14A
1
10-5
10-4
10-3
10-2
10-1
100
101
0.001
0.01
0.1
10
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
0.5
0.02
0.1
0.01
0.2
FSYA254D, FSYA254R


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