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FSS230R1 Datasheet(PDF) 1 Page - Intersil Corporation |
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FSS230R1 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 8 page 3-77 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 Features • 8A, 200V, rDS(ON) = 0.440Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 3.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Formerly available as type TA17637. Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc- ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Symbol Package TO-257AA Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSS230D1 10K TXV FSS230D3 100K Commercial FSS230R1 100K TXV FSS230R3 100K Space FSS230R4 D G S CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. G S D File Number 4054.2 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 |
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