3

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

-

-

1.2

V

Reverse Recovery Time

-

-

310

ns

Reverse Recovery Charge

-

1.9

-

µC

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

100K RAD

300K RAD

Drain to Source Breakdown Volts

(Note 3)

250

-

-

-

V

Gate to Source Threshold Volts

(Note 3)

2.0

4.5

1.5

4.5

V

Gate to Body Leakage

(Notes 2, 3)

-

100

100

nA

Zero Gate Leakage

(Note 3)

-

25

50

µA

Drain to Source On-State Volts

(Notes 1, 3)

-

1.98

-

2.97

V

Drain to Source On Resistance

(Notes 1, 3)

-

0.215

-

0.270

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

(V)

(NOTE 6)

MAXIMUM

ION SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating Area

SEESOA

Br

37

36

-10

250

Br

37

36

-15

200

I

60

32

-2

200

I

60

32

-8

150

Au

82

28

0

150

Au

82

28

-5

100

NOTES:

4. Testing conducted at Brookhaven National Labs.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. TYPICAL SEE SIGNATURE CURVE

120

80

40

0

0

-20

160

µ

µ

µ

200

240

-4

-8

-12

-16

280

LET = 82 GOLD

LET = 60 IODINE

LET = 37 BROMINE

240

200

160

120

80

40

0

-30

0

-5

-10

-15

-20

-25

280

FSPYE234R, FSPYE234F