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FSJ163D1 Datasheet(PDF) 2 Page - Intersil Corporation |
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FSJ163D1 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 4-2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSJ163D, FSJ163R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 130 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 130 V Continuous Drain Current TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 60 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 38 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 180 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P T 192 W TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P T 77 W Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS 180 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 60 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 180 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 130 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.0 V TC = 25 oC 1.5 - 4.0 V TC = 125 oC 0.5 - - V Zero Gate Voltage Drain Current IDSS VDS = 104V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC - - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 60A - - 1.89 V On Resistance rDS(ON)12 ID = 38A, VGS = 12V TC = 25 oC - 0.022 0.030 Ω TC = 125 oC - - 0.052 Ω Turn-On Delay Time td(ON) VDD = 65V, ID = 60A, RL = 1.08Ω, VGS = 12V, RGS = 2.35Ω - - 40 ns Rise Time tr - - 170 ns Turn-Off Delay Time td(OFF) - - 90 ns Fall Time tf - - 45 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 65V, ID = 60A - - 310 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 170 200 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 7.4 nC Gate Charge Source Qgs -30 35 nC Gate Charge Drain Qgd - 99 120 nC Plateau Voltage V(PLATEAU) ID = 60A, VDS = 15V - 8 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 4300 - pF Output Capacitance COSS - 130 - pF Reverse Transfer Capacitance CRSS - 500 - pF Thermal Resistance Junction to Case R θJC - - 0.65 oC/W FSJ163D, FSJ163R |
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