4-1

FRM9250D, FRM9250R,

FRM9250H

16A, -200V, 0.300 Ohm, Rad Hard,

P-Channel Power MOSFETs

File Number

3267.3

Package

TO-204AA

Symbol

D

G

S

Features

• 16A, -200V, RDS(on) = 0.300

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current

- 12nA Per-RAD(Si)/sec Typically

• Neutron

Description

Intersil Corporation has designed a series of SECOND GENERATION hardened

power MOSFETs of both N and P channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as 25m

Ω. Total dose hardness

is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging

ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with

current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for

any desired deviations from the data sheet.

FRM9250D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-200

V

Drain-Gate Voltage (RGS = 20k

Ω). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-200

V

Continuous Drain Current

16

10

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

48

A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

150

60

1.2

W

W

Inductive Current, Clamped, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

48

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

16

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

48

A

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

-55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207