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MMBT3906 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MMBT3906 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type Transistors 1 www.kexin.com.cn Features Absolute Maximum Ratings Ta = 25 Electrical Characteristics Ta = 25 PNP Transistors MMBT3906 (KMBT3906) Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Classification of hfe(1) Type MMBT3906-L MMBT3906-H Range 100-300 100-200 200-300 ● Complementary to MMBT3904 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -6 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -100 Collector- emittercut-off current ICEX VCE=- 30 V , VEB(off)=3V -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 IC=-10 mA, IB=- 1mA -0.2 IC=-50 mA, IB= -5mA -0.3 IC= -10 mA, IB= -1mA -0.65 -0.85 IC= -50 mA, IB= -5mA -0.95 hfe(1) VCE= -1V, IC= -10mA 100 300 hfe(2) VCE= -1V, IC=-50mA 60 hfe(3) VCE= -1V, IC=-100mA 30 Delay time td VCC=-3.0V,VBE=0.5V 35 Rise time tr IC=-10mA,IB1=-1.0mA 35 Storage time ts VCC=-3.0V,IC=-10mA 225 Fall time tf IB1=IB2=-1.0mA 75 V V ns nA DC current gain VCE(sat) Collector-emitter saturation voltage Base - emitter saturation voltage VBE(sat) Collector input capacitance Cib VEB= -0.5V, IE= 0,f=1MHz 10 Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 4.5 Transition frequency fT VCE= -20V, IC= -10mA,f=100MHz 250 MHz pF MMBT3906 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 ● Marking: 2A |
Similar Part No. - MMBT3906_15 |
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Similar Description - MMBT3906_15 |
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