CZT3055_15 datasheet(1/1 Pages) KEXIN

Part #	CZT3055

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

CZT3055 (KZT3055)

■

Features

●

High Current

●

Low Voltage

●

Surface Mounted Power Amplifier Application

●

Complement to CZT2955

0.70±0.1

4.60 (typ)

6.50±0.2

3.00±0.1

2.30 (typ)

SOT-223

Unit:mm

1.Base

2.Collector

3.Emitter

4.Collector

4

1

2

3

0.250

Gauge Plane

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

100

Collector - Emitter Voltage

VCEO

60

Emitter - Base Voltage

VEBO

7

Collector Current - Continuous

IC

6

A

Collector Power Dissipation

PC

1

W

Thermal Resistance From Junction To Ambient

RθJA

125

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 1mA， IE= 0

100

Ic= 30 mA， IB= 0

60

Ic= 30 mA， IB= 0 , RBE=100Ω

70

Emitter - base breakdown voltage

VEBO

IE= 1 mA， IC= 0

7

Collector-base cut-off current

ICBO

VCB= 100 V , IB= 0

100

ICEO

VCE= 30 V , IE= 0

700

ICEV

VCE= 100 V , VEB= 1.5V

1

mA

Emitter cut-off current

IEBO

VEB= 7V , IC=0

5

mA

Collector-emitter saturation voltage

VCE(sat) IC=4 A, IB=400mA

1.1

Base - emitter saturation voltage

VBE(sat) IC=4 A, IB=400mA

1.2

Base-emitter voltage

VBE

VCE= 4V, IC= 4A

1.5

hFE(1)

VCE= 4V, IC= 4A

20

70

hFE(2)

VCE= 4V, IC= 6A

5

Transition frequency

fT

VCE= 10V, IC= 500mA,f=1MHz

2.5

MHz

DC current gain

V

Collector- emitter breakdown voltage

VCEO

Collector cut-off current

uA

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